| Autor: |
Hsueh, Kuang-Po, Huang, Shou-Chien, Li, Ching-Tai, Hsin, Yue-Ming, Sheu, Jinn-Kong, Lai, Wei-Chih, Tun, Chun-Ju |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/26/2007, Vol. 90 Issue 13, p132111-1, 3p, 1 Chart, 4 Graphs |
| Abstrakt: |
This work investigates the temperature dependence of the current-voltage (I-V) characteristics of n-ZnO/p-GaN junction diodes. The n-ZnO films were deposited on top of the p-GaN by dc sputtering with subsequent annealings at 500, 600, 700, and 800 °C for 60 s. The Hall measurement and the x-ray diffraction pattern are measured to study the n-ZnO films. The temperature sensitivity coefficients of the I-V characterizations are obtained by different substrate temperatures (25, 50, 100, and 150 °C) and the extracted values are 2.10, 1.93, 3.22, and 1.36 mV/°C in the forward bias and 8.7, 8.0, 4.6, and 2.3 mV/°C in the reverse bias, respectively. The fabricated n-ZnO/p-GaN diode with ZnO annealing temperatures at 800 °C demonstrates the lowest temperature dependence. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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