On the Use of a SiGe Spike in the Emitter to Improve the ƒTXBVCEO Product of High-Speed SiGe HBTs.

Autor:	Choi, L. J., van Huylenbroeck, S., Piontek, A., Sibaja-Hernandez, A., Kunnen, E., Meunier-Beillard, P., van Noort, W. D., Hijzen, E., Decoutere, S.
Předmět:	RECOMBINATION in semiconductors SILICON GERMANIUM ELECTRIC currents SEMICONDUCTOR junctions JUNCTION transistors ELECTRIC breakdown
Zdroj:	IEEE Electron Device Letters; Apr2007, Vol. 28 Issue 4, p270-272, 3p, 1 Chart, 3 Graphs
Abstrakt:	Aggressive vertical scaling of SiGe HBTs has yielded impressive values for the cut-off frequencies (ƒT), but these HBTs often suffer from too high current gains. This leads to low values for the open-base breakdown voltage (BVCEO). In this letter we demonstrate the use of a SiGe spike in the emitter as a practical method to increase the base current. Hence, the breakdown voltage is increased. At the same time, the device RF performance is not affected, which leads to a significant improvement in the ƒTXBVCEO product. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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