| Autor: |
K A Bulashevich, V F Mymrin, S Yu Karpov, D M Demidov, A L Ter |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; May2007, Vol. 22 Issue 5, p502-510, 9p |
| Abstrakt: |
We examine effects of free-carrier absorption produced by non-equilibrium electrons and holes injected in the waveguide on characteristics of high-power AlGaAs-based laser diodes emitting light at 808 nm. The carrier transport in the laser heterostructures is studied theoretically, using the drift-diffusion numerical approach. On the basis of simulations, a relation between the current density and non-equilibrium carrier concentrations in the waveguides is found. The internal optical losses of the waveguide modes and their effect on the differential quantum efficiency of the laser diodes are estimated from the computed carrier concentrations. Some approaches aimed at reducing the free-carrier absorption and, thus, improving the laser performance are discussed. The theoretical predictions are compared with available data to validate the theoretical model and justify the conclusions coming from the simulations. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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