| Autor: |
Tripathy, S., Lin, Vivian K. X., Vicknesh, S., Chua, S. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/2007, Vol. 101 Issue 6, p063525-4, 4p, 3 Graphs |
| Abstrakt: |
In this study, the authors have employed micro-Raman scattering to characterize the residual stress in freestanding GaN-based micromechanical structures on (111)-oriented silicon substrates. Arrays of freestanding cantilevers and microbridges have been fabricated using a combination of dry etching techniques. The Si material beneath the GaN microstructures is removed by a nonplasma XeF2-based dry release technique. Two distinct sets of GaN-based layers on Si(111) with a different amount of growth-induced tensile stress are selected for the fabrication of freestanding cantilevers. The residual stress in these micromechanical structures is determined from the peak shift of the E2-high phonon mode of GaN. Such GaN mechanical structures on Si platforms may be useful for the fabrication of GaN-based microelectromechanical systems and sensors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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