| Autor: |
Ivanova, G. N., Nedeoglo, D. D., Negeoglo, N. D., Sirkeli, V. P., Tiginyanu, I. M., Ursaki, V. V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/2007, Vol. 101 Issue 6, p063543-1, 11p, 1 Chart, 12 Graphs |
| Abstrakt: |
We report on the results of a complex study of electrical (77-300 K) and luminescence (10-300 K) properties of n-ZnSe single crystals annealed in a Zn melt containing Al impurity at concentrations ranging from 0.1 to 80 at. %. It was established that Al atoms form donor centers only at a low impurity concentration (≤0.5 at. %). The increase of the amount of Al atoms in the crystal results in the formation of (VZnAlZn) associative acceptor centers leading to the self-compensation of the shallow Al donor impurity. This process is accompanied by the emergence and development of a self-activated luminescence band associated with the (VZnAlZn) acceptor centers. We show that further increase of the Al content in the melt (≥10 at. %) leads to the dissociation of the acceptor complexes and to a recurrent donor doping effect. The photoluminescence spectra of such crystals are dominated by activated luminescence via the (CuZnVSeCui) and (CuZnAlZn) associative centers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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