| Autor: |
P Sievil, P Rytk, O Hahtela, N Chekurov, J Kauppinen, I Tittonen |
| Předmět: |
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| Zdroj: |
Journal of Micromechanics & Microengineering; May2007, Vol. 17 Issue 5, p852-859, 8p |
| Abstrakt: |
A cantilever-type silicon device for sensing changes in pressure has been designed, fabricated and characterized. The microfabrication process is based on two-sided etching of silicon-on insulator (SOI) wafers. The rectangular cantilevers are 9.5 µm thick, and cover an area of a few square millimeters. The cantilevers are surrounded by thick and tight frames, since on the three free sides there are only narrow, micrometer sized air gaps between the cantilever and the frame. This design and excellent mechanical properties of single crystal silicon enable sensitive detection of time-dependent gas pressure variations, i.e. acoustic waves. The mechanical properties of the cantilever have been characterized by analyzing its dynamic behavior. The resonance frequency and the mechanical vibrational mode patterns have been determined using finite-element method (FEM) simulations and laser interferometry. These results are found to be in good agreement with each other. Initially this mechanical door-like cantilever was designed to be used in ultra-high sensitivity photoacoustic gas sensing, but it can also be applied quite generally in various kinds of sound wave detection schemes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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