| Autor: |
Gritsenko, M. I., Kucheev, S. I., Lytvyn, P. M., Tishenko, V. G., Tkach, V. M., Yelshansky, V. B. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2006, Vol. 9 Issue 2, p61-64, 4p |
| Abstrakt: |
In this work, the method to form bistable patterning in a cholesteric cell with Bragg's reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO2 structure in which a potential relief on SiO2 surface is induced due to enrichment and depletion of required form areas of the silicon near-surface layer during external electric field action. The patterning of enrichment is determined by the positive charge embedded into SiO2 film, which is formed by thermodiffusion of aluminum atoms. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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