Autor: |
Kobatake, Hidekazu, Fukuyama, Hiroyuki, Minato, Izuru, Tsukada, Takao, Awaji, Satoshi |
Předmět: |
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Zdroj: |
Applied Physics Letters; 2/26/2007, Vol. 90 Issue 9, p094102-1, 3p, 2 Diagrams, 2 Graphs |
Abstrakt: |
Thermal conductivity of liquid silicon is indispensable for numerical modeling of silicon crystal growth processes and for elucidating electron transport phenomena in high-temperature liquids. However, crucial obstacles render measurement of thermal conductivity difficult: convection and contamination from contact materials. In this study, the authors developed a noncontact measurement of thermal conductivity of liquid silicon using electromagnetic levitation in a static magnetic field. Convection in the levitated silicon becomes negligible above 2 T. The determined thermal conductivity shows that the electron contribution is dominant for thermal transport in liquid silicon at temperatures of 1750–2050 K. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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