| Autor: |
Seppänen, T., Hultman, L., Birch, J., Beckers, M., Kreissig, U. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/2007, Vol. 101 Issue 4, p043519-N.PAG, 6p, 1 Chart, 4 Graphs |
| Abstrakt: |
Al1-xInxN (0001) thin films of the pseudobinary AlN–InN system were grown epitaxially onto (111)-oriented MgO wafers with seed layers of Ti1-yZryN by dual direct current magnetron sputtering under ultrahigh vacuum conditions. The relaxed film c-axis lattice parameters determined by x-ray diffraction were studied as a function of composition in the range of 0.071-xInxN system. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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