| Autor: |
Wang, Wenyong, Xiong, Hao D., Edelstein, Monica D., Gundlach, David, Suehle, John S., Richter, Curt A., Hong, Woong-Ki, Lee, Takhee |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/2007, Vol. 101 Issue 4, p044313-N.PAG, 5p, 2 Black and White Photographs, 7 Graphs |
| Abstrakt: |
We fabricated ZnO nanowire field effect transistors (FETs) and systematically characterized their low frequency (f) noise properties. The obtained noise power spectra showed a classical 1/f dependence. A Hooge’s constant of 5×10-3 was estimated from the gate dependence of the noise amplitude. This value is within the range reported for complementary metal-oxide semiconductor (CMOS) FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O2- on the nanowire surfaces. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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