| Autor: |
El Hamid, Hamdy Abd, Iñíguez, Benjamin, Guitart, Jaume Roig |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Mar2007, Vol. 54 Issue 3, p572-579, 8p, 2 Black and White Photographs, 1 Diagram, 7 Graphs |
| Abstrakt: |
Analytical physically based models for the threshold voltage, subthreshold swing, and drain-induced barrier lowering (DIBL) of undoped cylindrical gate-all-around MOSFETs have been derived based on an analytical solution of 2-D Poisson's equation (in cylindrical coordinates) in which the mobile charge term has been included. Using the new model, threshold voltage, DIBL and subthreshold swing sensitivities to channel length, and channel thickness have been investigated. The models for DIBL, subthreshold swing, and threshold voltage rolloff parameters have been verified by comparison with 3-D numerical simulations; close agreement with the numerical simulations has been observed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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