| Autor: |
M Ya Valakh, V M Dzhagan, V O Yukhymchuk, O V Vakulenko, S V Kondratenko, A S Nikolenko |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Apr2007, Vol. 22 Issue 4, p326-329, 4p |
| Abstrakt: |
Raman and lateral photoconductivity spectra of self-assembled SiGe nanoislands with heights of ?1 to 2 nm and bases of 10-20 nm were studied. Investigated heterostructures formed at a temperature 300 °C after deposition of Ge with a nominal layer thickness of dGe8 monolayers have the shape of the so-called hut clusters. It was estimated that the value of elastic deformation (xx) is ?0.028 ± 0.002 (zz= 0.015 ± 0.002), the germanium content in islands (x) is 0.87 ± 0.05. It was determined that the value of the valence band energy offset in the heterojunction between the strained Si0.13Ge0.87layer of nanoislands and adjacent stretched Si is ?0.47 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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