| Autor: |
Tao, Y., Tillack, M. S., Harilal, S. S., Sequoia, K. L., Najmabadi, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/2007, Vol. 101 Issue 2, p023305-N.PAG, 8p, 3 Black and White Photographs, 2 Diagrams, 7 Graphs |
| Abstrakt: |
The interaction of a laser pulse with a Sn preplasma formed by a low energy prepulse was investigated for an extreme ultraviolet (EUV) lithography light source. A much lower ion kinetic energy and nearly the same conversion efficiency from laser to in-band (2% bandwidth) 13.5 nm EUV light were simultaneously observed as compared with those from the direct interaction with a solid surface. The reason comes from the interaction of the laser pulse with a smooth preplume induced by the prepulse. The density profile of the preplume was measured with time-resolved shadowgraphy and could be fitted with a Gaussian function. The energy of the ions located at the flux peak Ep scales with the length of the preplume ls as Ep∝1/ls. Laser absorption in the low-density preplume and ion acceleration during plasma expansion are discussed. This result provides a general way to control particle energy from a laser plasma interaction. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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