| Autor: |
Bollet, F., Gillin, W. P. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 1/1/2007, Vol. 101 Issue 1, p013502-N.PAG, 7p, 1 Chart, 9 Graphs |
| Abstrakt: |
A methodology to characterize of thermally interdiffused heterostructures by high resolution x-ray diffraction is presented. The technique provides detailed information on the strains and compositions generated throughout the interdiffusion process in a 10 nm lattice matched InGaAs/InP sample annealed at 800 °C. It shows that the diffusion process is complex and subject to the influence of the miscibility gap in the quaternary InGaAsP system. The technique also appears to provide a route to mapping the binodal isotherms of the InGaAsP miscibility gap. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
