| Autor: |
Wen, Hai, Wang, Xiaohui, Deng, Xiangyun, Sun, Tieyu, Li, Longtu |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/2007, Vol. 101 Issue 1, p016103-N.PAG, 3p, 4 Graphs |
| Abstrakt: |
The dielectric and ferroelectric properties of sol-gel derived BiScO3–PbTiO3 thin films prepared by two different kinds of crystallization processes were studied. The film prepared by a single crystallization had a higher remanent polarization and dielectric constant than the one prepared by a multiple crystallization. The remanent polarization and dielectric constant were 50 μC/cm2 and 1609 for the single crystallization sample, and 40 μC/cm2 and 1429 for the multiple crystallization one. The investigation of the Rayleigh law revealed that the film prepared by a multiple crystallization, processed more irreversible domain wall motion contribution and less reversible contribution with respect to the one by a single crystallization. This was attributed to the layer-to-layer interfaces generated during the multiple crystallization processing, which acted as energy barrier and had a pinning effect on the domain wall motion, resulting more irreversible domain wall motion. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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