Low leakage current—stacked MgO/Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors.

Autor:	Lim, Mi-Hwa, Kang, KyongTae, Kim, Ho-Gi, Kim, Il-Doo, Choi, YongWoo, Tuller, Harry L.
Předmět:	ELECTRIC leakage ZINC oxide thin films THIN film transistors NIOBIUM compounds BISMUTH compounds MAGNESIUM compounds INSULATED gate bipolar transistors LOW voltage systems
Zdroj:	Applied Physics Letters; 11/13/2006, Vol. 89 Issue 20, p202908, 3p, 4 Graphs
Abstrakt:	The authors report on the role of MgO capping layers in notably reducing leakage currents and improving mobility in ZnO thin film transistors (TFTs) utilizing compatible high-k Bi1.5Zn1.0Nb1.5O7 (BZN) gate insulators. All room temperature processed ZnO based TFTs with stacked MgO/BZN gate insulator exhibited a much enhanced field effect mobility of 5.4 cm2/V s with excellent saturation characteristics as compared to that (μFE=1.13 cm2/V s) of ZnO based TFTs with BZN gate insulator. This work demonstrates the suitability of MgO/BZN stacked gate insulators in the fabrication of low voltage ZnO based TFTs on plastic substrates. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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