| Autor: |
Borland, John, Shishiguchi, Seiichi, Mineji, Akira, Krull, Wade, Jacobson, Dale, Tanjyo, Masayasu, Lerch, Wilfried, Paul, Silke, Gelpey, Jeff, McCoy, Steve, Venturini, Julien, Current, Michael, Faifer, Vladimir, Hillard, Robert, Benjamin, Mark, Walker, Tom, Buczkowski, Andrzej, Li, Zhiqiang, Chen, James |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2006, Vol. 866 Issue 1, p96-100, 5p, 4 Diagrams, 4 Charts, 5 Graphs |
| Abstrakt: |
High dopant activation and low damage p+ ultra-shallow junctions (USJ) 15–20nm deep for 45nm node applications have been realized using B10H14 & B18H22 implant species along with flash, laser or SPE diffusion-less activation annealing techniques. New USJ metrology techniques were employed to determine: 1) dopant activation level and 2) junction quality (residual implant damage) using both contact and non-contact methods. © 2006 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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