| Autor: |
Zhai, Qing, Kim, Youn Ki, Rodier, Dennis, Variam, Naushad |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2006, Vol. 866 Issue 1, p468-471, 4p, 1 Diagram, 3 Charts, 4 Graphs |
| Abstrakt: |
Until recently most semiconductor manufacturers have used high-energy ion implanters for deep well formation. This was partially driven by the fact that these well implants were beyond the productive operating range of conventional medium current implanters to achieve in a productive and cost effective fashion. Recently, VSEA has increased the energy range of the VIISta medium current implanter to 300keV, 600keV and 900keV for single charge, double charge and triple charge implantation, respectively. A combination of this new capability with a reduction in well implant energies due to device scaling, has brought most well implants in the regime of the VIISta 900XP system. This paper describes the superior process performance that is achieved and how this capability results in increased productivity and reduced cost of ownership. © 2006 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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