Modeling and Optimization of Thin-Film Devices with Si...-Ge... Alloys.

Autor: Koschier, Linda M., Wenham, Stuart R.
Předmět:
Zdroj: IEEE Transactions on Electron Devices; Oct99, Vol. 46 Issue 10, p2111, 5p, 2 Diagrams, 7 Graphs
Abstrakt: Presents information on a study which focused on the incorporation of silicon-germanium alloys into a thin-film multilayer structure. Modeling of PC1D, a one-dimensional circuit simulation package; Simulation results and discussion; Conclusions.
Databáze: Complementary Index