| Autor: |
Kok-Keong Lew, Ling Pan, Dickey, Elizabeth C., Redwing, Joan M. |
| Předmět: |
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| Zdroj: |
Journal of Materials Research; Nov2006, Vol. 21 Issue 11, p19-19, 1p |
| Abstrakt: |
The effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by the vapor-liquid-solid method using gaseous precursors (SiH4 and GeH4) was investigated. Transmission electron microscopy was used to characterize the structural properties and elemental composition of the nanowires. At higher growth temperatures (>425 °C), Ge thin film deposition on the nanowire surface resulted in Au loss during growth and the formation of tapered structures. By simultaneously reducing the growth temperature from 425 to 325 °C to suppress the rate of Ge film deposition and increasing the GeH4/(GeH4 + SiH4) gas ratio, Si1-xGex nanowires were produced with Ge fractions spanning the entire composition range. The Ge fraction follows that predicted from the elemental nanowire growth rates in the Ge-rich (x > 0.5) regime, but deviates to higher Ge fractions in Si-rich (x < 0.5) nanowires. A mechanism was proposed whereby surface diffusion provides an additional pathway to Ge incorporation in Si-rich Si1-xGex nanowires. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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