| Autor: |
Yamamoto, Hiroki, Kozawa, Takahiro, Okamoto, Kazumasa, Saeki, Akinori, Tagawa, Seiichi, Ando, Tomoyuki, Sato, Mitsuru, Komano, Hiroji |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jul/Aug2006, Vol. 24 Issue 4, p1833-1836, 4p, 5 Graphs |
| Abstrakt: |
The halogenation of resist materials is a well-known strategy for the improvement in resist performance particularly in electron beam and x-ray resists. However, for chemically amplified resists, the halogenation of polymers requires particular caution because halogenated polymers may interfere with acid generation. In this work, acid generation in poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] films was investigated using steady-state spectroscopy and pulse radiolysis. Acid yield decreased with an increase in the ratio of hexafluoroalcohol units. It was found that the reactivity of polymers with low-energy electrons (∼thermal energy) correlates to the decrease in acid yield. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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