| Autor: |
Klyui, N. I., Litovchenko, V. G., Lukyanov, A. N., Neselevskaya, L. V., Sarikov, A. V., Dyskin, V. G., Gaziev, U. Kh., Settarova, Z. S., Tursunov, M. N. |
| Předmět: |
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| Zdroj: |
Technical Physics; May2006, Vol. 51 Issue 5, p654-658, 5p, 3 Charts, 3 Graphs |
| Abstrakt: |
The influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells is studied theoretically. The values of the short-circuit current density for Si solar cells covered by diamond-like carbon films deposited at different concentrations of nitrogen in the gas mixture are calculated and compared with the associated values for uncovered solar cells. It is shown that the short-circuit current density increases with nitrogen concentration in the gas mixture because of a lower light absorption by the growing film. Optimum thicknesses of the diamond-like carbon films are calculated that provides a maximal increase in the output short-circuit current density of Si-based solar cells under both AM1.5 and AM0 conditions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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