A 4-kV/2-A/5-kHz Compact Modulator for Nitrogen Plasma Ion Implantation.

Autor: Rossi, José O., Barroso, Joaquim J., Ueda, Mario, Da Silva, Graziela
Předmět:
Zdroj: IEEE Transactions on Plasma Science; Oct2006 Part 1 Of 4, Vol. 34 Issue 5, p1757-1765, 9p
Abstrakt: To treat stainless-steel surfaces by nitrogen plasma implantation, a solid-state compact modulator was devised, in which a 8.0-μF capacitor discharges through a forward converter composed of a low-blocking-voltage insulated-gate-bipolar- transistor switch (1.0 kV) and three step-up pulse transformers, rather than employing hard-tube devices such as in conventional plasma ion implantation pulsers, which are expensive and cumbersome. For this, a modulator was built to produce pulses with amplitudes of the order of 4 kV, duration of about 5.0 μs, and rise time of ∼1.0 μs with maximum current/frequencies capabilities of 2.0 A and 5 kHz, respectively. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index