| Autor: |
Kryzhanovskaya, N. V., Blokhin, S. A., Gladyshev, A. G., Maleev, N. A., Kuz’menkov, A. G., Arakcheeva, E. M., Tanklevskaya, E. M., Zhukov, A. E., Vasil’ev, A. P., Semenova, E. S., Maximov, M. V., Ledentsov, N. N., Ustinov, V. M., Stock, E., Bimberg, D. |
| Předmět: |
|
| Zdroj: |
Semiconductors; Sep2006, Vol. 40 Issue 9, p1101-1104, 4p, 5 Graphs |
| Abstrakt: |
Under study are temperature dependences of laser characteristics of a GaAs/(AlGa)xOy microdisk of 6 μm in diameter, fabricated using optical lithography, ion milling with a beam of Ar+ ions, and selective oxidation of the Al0.97Ga0.03As layer which forms the microdisk base. In As/InGaAs QDs are used as the microdisk active region. Room-temperature lasing in the 1.3-μm range is observed, with the threshold optical pumping power of 160 μW. The quality factor of microdisk modes is about 104. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
