| Autor: |
Fedorov, Vladimir V., Mirov, Sergey B., Gallian, Andrew, Badikov, Dmitri V., Frolov, Mikhail P., Korostelin, Yuri V., Kozlovsky, Vladimir I., Landman, Alexander I., Podmar'kov, Yuri P., Akimov, Vadim A., Voronov, Artem A. |
| Předmět: |
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| Zdroj: |
IEEE Journal of Quantum Electronics; Sep2006, Vol. 42 Issue 9, p907-917, 11p, 6 Black and White Photographs, 14 Graphs |
| Abstrakt: |
Spectroscopic properties and lasing of Fe:ZnSe and co-doped Fe:Cr:ZnSe crystals in the mid-infrared spectral range were studied at room and low temperatures. Using a free-running Er:YAG laser as a pump source, the output energy of the thermoelectrically cooled Fe:ZnSe laser was 142 mJ with 30% slope efficiency at T = 220 K. Passive Q-switched oscillation of Er:YAG laser with Fe:ZnSe crystal was demonstrated and used as a pump source for a Fe:ZnSe laser system. Room-temperature (RT) gain-switched lasing of Fe:ZnSe was achieved in microchip and selective cavity configurations using Q-switched Er:YAG and Raman-shifted Nd:YAG lasers as pump sources. The microchip laser threshold of 100 mJ/cm² was demonstrated using a Fe:ZnSe crystal without any reflection coatings. A slope efficiency of 13%, oscillation threshold of 1.3 m J, and tunable oscillation of Fe:ZnSe laser systems over 3.95–5.05 μm spectral range were realized at RT. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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