Investigation of Programming Charge Distribution in Nonoverlapped Implantation nMOSFETs.

Autor:	Jeng, Erik S., Pai-Chun Kuo, Chien-Sheng Hsieh, Chen-Chia Fan, Kun-Ming Lin, Hui-Chun Hsu, Wu-Ching Chou
Předmět:	METAL oxide semiconductor field-effect transistors CHARGE density waves ELECTRON distribution READ-only memory COMPLEMENTARY metal oxide semiconductors MICROELECTRONICS
Zdroj:	IEEE Transactions on Electron Devices; Oct2006, Vol. 53 Issue 10, p2517-2524, 8p, 7 Black and White Photographs, 5 Diagrams, 1 Chart, 9 Graphs
Abstrakt:	Novel gate-to-drain nonoverlapped-implantation (NOI) nMOSFETs have been developed as potential multibit-per-cell nonvolatile-memory (NVM) devices. The lateral charge distribution of the NOI NVM device programmed by channel hot electron injection is investigated by charge-pumping (CP) techniques with presumed interface trap distributions. For the first time, the CP results have revealed the lateral charge distribution and trapping density at the NOI's programmed state. The maximum trapping charge density locates near its drain junction. The charge distribution is estimated about 90 nm in length and spread widely over the NOI region. Two-dimensional simulators with charge bars using the same charge trapping distribution confirm the experimental results by fitting their IDS — VG curves. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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