Characterization of the luminescence center in photo- and electroluminescent amorphous silicon...

Autor:	Price, K. J., McNeil, L. E.
Předmět:	PHOTOLUMINESCENCE ELECTROLUMINESCENCE CHEMICAL vapor deposition SILICON oxide films
Zdroj:	Journal of Applied Physics; 9/1/1999, Vol. 86 Issue 5, p2628, 10p, 3 Charts, 8 Graphs
Abstrakt:	Presents information on a study which focused on the photoluminescence mechanism of photo- and electroluminescent amorphous silicon oxynitride films grown by plasma enhanced chemical vapor deposition. Experimental details; Results and discussion; Conclusions.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu