Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors.

Autor:	Turin, Valentin O., Balandin, Alexander A.
Předmět:	FIELD-effect transistors FURNACE atomic absorption spectroscopy SEMICONDUCTORS HEAT transfer TWO-dimensional electrophoresis
Zdroj:	Journal of Applied Physics; 9/1/2006, Vol. 100 Issue 5, p054501, 8p, 1 Diagram, 6 Graphs
Abstrakt:	We report results of the analytical and numerical investigation of self-heating effects in GaN-based high-power field-effect transistors. The problem of heat transfer in a transistor structure has been solved both analytically, using the method of images, and numerically. Two-dimensional electrothermal simulations of the GaN metal-semiconductor field-effect transistors on SiC and sapphire substrate have been performed in a framework of the drift-diffusion model. Using the physical-based simulations, we studied the dependence of the hot-spot temperature on the gate-to-gate pitch in the transistors with multiple gate fingers. Particular attention has been paid to comparison of self-heating effects in GaN transistors on SiC and sapphire substrates. The obtained results can be used for optimization of the thermal design of the GaN-based high-power field-effect transistors. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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