Autor: |
Mak, L. S., Chan, S. K., Wong, G. K. L., Sou, I. K. |
Předmět: |
|
Zdroj: |
Journal of Electronic Materials; Jun2006, Vol. 35 Issue 6, p1322-1322, 1p |
Abstrakt: |
The 1/f noise and shot noise studies were carried out on molecular beam epitaxy (MBE)-grown ZnS0.85Se0.15 and Zn0.43Mg0.57S ultraviolet (UV) detectors packaged in surface mount lead frames. Three ZnS0.85Se0.15 detectors with different thicknesses of the active layer and the top electrode pad were used. The highest onset of reverse bias for the appearance of 1/f noise is -27.5 V, and the highest dark resistances at zero bias is R0 = 3.7 × 1013 Ω. The observed difference in their noise performance implies that the increase of the thicknesses of both the active layer and the top electrode pad can significantly lower the noise levels and in turn lead to higher detectivity. The best detectivity achieved is 8.75 x 1013 cm Hz½W-1 in a ZnS0.85Se0.15 detector with an active layer of 5000 Å and a top electrode pad of Cr (50 Å)/Au (8000 Å). The typical detectivity achieved on Zn0.43Mg0.57S devices that have an active layer thickness just exceeds the critical thickness of phase transition is 1.54 x 1012 cm Hz½W-1. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
|