| Autor: |
Groenert, M. E., Markunas, J. K. |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; Jun2006, Vol. 35 Issue 6, p1287-1287, 1p |
| Abstrakt: |
To investigate the potential benefits of compositional grading for dislocation control in CdTe/Si growth, Cd1-xZnx Te buffer layers with x graded smoothly from 1 to 0 have been deposited on Si (211) surfaces. Growth has been characterized using reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), and etch pit density measurements. XRD showed an increase in rocking curve full-width at half-maximum (FWHM) and global lattice tilt with decreasing x values. Tilt was also observed to increase as buffer growth temperature was increased. Final surface dislocation densities did not decrease below 7 x 106 cm-2. EPD surface dislocation measurements showed reduced dislocation densities and dislocation clustering along the [1̄10] and [̄110] lines for CdTe cap layers grown on partially graded Cd1xZnxTe buffer layers with slow compositional grading rates. Samples grown with faster grading rates showed higher final EPD values, with dislocations clustering along the [31̄2] and [̄1̄32] lines. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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