| Autor: |
Yuan, Shu, Kim, Yong, Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H., Cohen, R. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/1998, Vol. 83 Issue 3, p1305, 7p, 1 Diagram, 2 Charts, 8 Graphs |
| Abstrakt: |
Presents a study of the enhancement of interdiffusion in GaAs/A1GaAs quantum wells due to anodic oxides. Effects of intermixing on the quantum well shape; What prompted an increase in the intermixing; Information on the effect injection of defects had on the intermixing; Experiments conducted in this study; Results of this study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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