| Autor: |
A. E. Ivanchikov, A. M. Kisel', V. I. Plebanovich, V. I. Pachynin, V. E. Borisenko |
| Zdroj: |
Russian Microelectronics; May2003, Vol. 32 Issue 3, p145-150, 6p |
| Abstrakt: |
The formation mechanism, composition, and properties of an oxide film that grows on an Si3N4 mask during the LOCOS process are studied experimentally. The effect of the HF etching of the mask oxide film on the profile of the bird's beak is investigated for different etching conditions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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