| Autor: |
Bhosle, V., Tiwari, A., Narayan, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/2006, Vol. 100 Issue 3, p033713, 6p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 4 Graphs |
| Abstrakt: |
In this paper, we report on the metal-semiconductor transition behavior observed in transparent and conducting ZnO:Ga films grown by pulsed-laser deposition. The electrical resistivity measurements were carried out on ZnO films with varying Ga concentration in the temperature range of 14 to 300 K. The electrical properties were correlated with film structure, and detailed structural characterization was performed using x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. The room-temperature resistivity of these films was found to decrease with Ga concentration up to 5% Ga, and then increase. The lowest value of resistivity (1.4 ×-4 Ω cm) was found at 5% Ga. Temperature dependent resistivity measurements showed a metal-semiconductor transition, which is rationalized by localization of degenerate electrons. A linear variation of conductivity with √T below the transition temperature suggests that the degenerate electrons are in a weak-localization regime. It was also found that the transition temperature is dependent on the Ga concentration and is related to the increase in disorder induced by dopant addition. The results of this research help to understand the additional effects of dopant addition on transport characteristics of transparent conducting oxides (TCOs) and are critical to further improvement and optimization of TCO properties. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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