Interference of charge carrier in a double-dot nanopillar transistor.

Autor: Yue-Min Wan, Hsien-Hsun Yang, Chin-Lung Sung, Shu-Fen Hu
Předmět:
Zdroj: Applied Physics Letters; 7/31/2006, Vol. 89 Issue 5, p053515, 3p, 1 Diagram, 2 Charts, 2 Graphs
Abstrakt: In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n=1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index