Divalent silicon, germanium, and tin compounds with element—heteroatom bonds.

Autor:	N. N. Zemlyanskii, I. V. Borisova, M. S. Nechaev, V. N. Khrustalev, V. V. Lunin, M. Yu. Antipin
Zdroj:	Russian Chemical Bulletin; May2004, Vol. 53 Issue 5, p980-1006, 27p
Abstrakt:	Principal results and trends in chemistry of organic derivatives of divalent silicon, germanium, and tin containing bonds between these elements and the halogen, nitrogen, oxygen, and sulfur atoms are briefly surveyed. Selected characteristics of compounds with the element—phosphorus and element—arsenic bonds are discussed for comparison. Data on the synthesis and structures of new types of these compounds, viz., germanium(ii) diacylates, the alkoxy derivatives E14(OR)2 and E14(OR)Y (E14 = Ge, Sn; R = Me2NCH2CH2; Y = Cl, AcO, (Me3Si)2N), and the ate-complexes Li(+)[E14(OCH2CH2NMe2)3](–) and [Li(thf)2](+)[TsiE14(SBu)2](–) (E14 = Ge, Sn; Tsi = (Me3Si)3C), are presented. It was established for the first time that germanium(ii) and tin(ii) derivatives can be stabilized in the monomeric form only through the intramolecular Nsp3→E14 coordination bonds and the σ-acceptor effect of the oxygen atoms without introduction of bulky substituents. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink