| Autor: |
Grushko, N. S., Loginova, E. A., Potanakhina, L. N. |
| Předmět: |
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| Zdroj: |
Semiconductors; May2006, Vol. 40 Issue 5, p570-573, 4p, 1 Chart, 4 Graphs |
| Abstrakt: |
Methods for finding the parameters (energies and capture coefficients for electrons and holes) of the levels involved in the formation of the recombination flux are suggested. The temperature variation of these parameters for AlGaN/InGaN/GaN and InGaN/SiC structures is discussed. The parameters of the levels responsible for tunneling recombination are determined. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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