| Autor: |
Blokhin, S. A., Maleev, N. A., Kuz'menkov, A. G., Shernyakov, Yu. M., Novikov, I. I., Gordeev, N. Yu., Dyudelev, V. V., Sokolovskiĭ, G. S., Kuchinskiĭ, V. I., Kulagina, M. M., Maximov, M. V., Ustinov, V. M., Kovsh, A. R., Mikhrin, S. S., Ledentsov, N. N. |
| Předmět: |
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| Zdroj: |
Semiconductors; May2006, Vol. 40 Issue 5, p615-619, 5p, 6 Graphs |
| Abstrakt: |
Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 µm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10–12)-µm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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