| Autor: |
Vlasov, A. P., Bonchyk, O. Yu., Fodchuk, I. M., Zaplitnyy, R. A., Barcz, A., Swiatek, Z. T. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2006, Vol. 9 Issue 1, p36-42, 7p |
| Abstrakt: |
Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg1-xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer CdyHg1-yTe (y > x) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ∼100 %, electrical activity of dopants in the CdxHg1-xTe epitaxially grown layers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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