| Autor: |
Hopkinson, M., Jin, C.Y., Liu, H.Y., Navaretti, P., Airey, R. |
| Předmět: |
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| Zdroj: |
Electronics Letters (Institution of Engineering & Technology); 8/3/2006, Vol. 42 Issue 16, p923-924, 2p, 3 Graphs |
| Abstrakt: |
The quaternary GaInNAs barrier layer was used to improve the performance of 1.3 µm GaInNAs single quantum well lasers grown by MBE. A record low threshold current density of 178 A/cm2 and a record low transparent current density of 63 A/cm2 were achieved by a ridge waveguide laser with emission at 1336 nm. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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