Terahertz plasma wave generation in ultrashort-channel field effect transistors: The essential role of carrier drift velocity saturation.

Autor:	Cheremisin, M. V., Samsonidze, G. G.
Předmět:	PLASMA waves ELECTRON gas TRANSISTORS SEMICONDUCTORS ACOUSTIC surface waves SOUND waves
Zdroj:	Journal of Applied Physics; 6/15/2006, Vol. 99 Issue 12, p123707, 7p, 1 Chart, 5 Graphs
Abstrakt:	Taking into account both the carrier scattering and the velocity saturation, we examine the plasma wave instability of the high-density two-dimensional electron gas in a field effect transistor. It is shown that both the carrier scattering and the velocity saturation lead to a strong damping of the plasma wave instability. A threshold diagram of the instability is calculated. The device parameters required for a plasma wave generation are shown to be more strict than those reported in up-to-date subterahertz emission experiments. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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