| Autor: |
Jae Bon Koo, Sun Jin Yun, Jung Wook Lim, Seong Hyun Kim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Taehyoung Zyung |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/17/2006, Vol. 89 Issue 3, p033511, 3p, 4 Graphs |
| Abstrakt: |
The pentacene thin-film transistors with the plasma-enhanced atomic-layer-deposited 150 nm thick Al2O3 or 120 nm thick ZrO2 have been operated at gate voltages between -3 and 3 V. The inverter with a ZrO2 gate dielectric shows a gain of 49 and a full swing from supply voltage (Vdd) to 0 V, operating at input voltages (Vin) from 0 to -1 V and at Vdd of -1 V. The hysteresis observed in the voltage transfer characteristic of the inverter depends on the scan range of Vin applied to the driver transistor, regardless of the Vdd applied to the load transistor. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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