| Autor: |
B Ilahi, B Salem, V Aimez, L Sfaxi, H Maaref, D Morris |
| Předmět: |
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| Zdroj: |
Nanotechnology; Aug2006, Vol. 17 Issue 15, p3707-3709, 3p |
| Abstrakt: |
Proton implantation followed by rapid thermal annealing (RTA) hasbeen employed for the post-growth tuning of the band gap of molecularbeam epitaxy grown InAs/GaAs quantum dots (QDs). To enhance QDintermixing, point defects are created by proton implantation at different doses(5 1010–1014cm−2) followed by rapidthermal annealing at 675 C for 30s. Low-temperature photoluminescence (PL) measurements have shown that theproton-implantation-induced intermixing alters both the optical transition energies and thePL full width at half maximum (FWHM). A purely proton-implantation inducedband gap tuning limit of 131meV has been achieved for an implantation dose of5 1013cm−2, keeping both the QDs’ character and around 46% of the initial integrated PLintensity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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