| Autor: |
Ragnarsson, Lars-Åke, Severi, Simone, Trojman, Lionel, Johnson, Kevin D., Brunco, David P., Aoulaiche, Marc, Houssa, Michel, Kauerauf, Thomas, Degraeve, Robin, Delabie, Annelies, Kaushik, Vidya S., De Gendt, Stefan, Tsai, Wilman, Groeseneken, Guido, De Meyer, Kristin, Heyns, Marc |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jul2006, Vol. 53 Issue 7, p1657-1668, 12p, 15 Black and White Photographs, 1 Diagram, 2 Charts, 9 Graphs |
| Abstrakt: |
The authors demonstrate high-performing n-channel transistors with a HfO2/TaN gate stack and a low thermal-budget process using solid-phase epitaxial regrowth of the source and drain junctions. The thinnest devices have an equivalent oxide thickness (EOT) of 8 Å, a leakage current of 1.5 A/cm² at VG = 1 V, a peak mobility of 190 cm²/V · s, and a drive-current of 815 μA/μm at an OFF-state current of 0.1 μA/μm for VDD = 1.2 V. Identical gate stacks processed with a 1000-°C spike anneal have a higher peak mobility at 275 cm²/V · s, but a 5-Å higher EOT and a reduced drive current at 610 μA/μm. The observed performance improvement for the low thermal-budget devices is shown to be mostly related to the lower EOT. The time-to-breakdown measurements indicate a maximum operating voltage of 1.6 V (1.2 V at 125 °C) for a ten-year lifetime, whereas positive-bias temperature-instability :measurements indicate a sufficient lifetime for operating voltages below 0.75 V. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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