| Autor: |
Steudel, Soeren, De Vusser, Stijn, Myny, Kris, Lenes, Martijn, Genoe, Jan, Heremans, Paul |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 6/1/2006, Vol. 99 Issue 11, p114519, 7p, 1 Color Photograph, 2 Diagrams, 7 Graphs |
| Abstrakt: |
In this article, we compare the direct current (dc) and high-frequency performance of two different organic diode structures, a vertical diode and an organic field effect transistor (OTFT) with shorted drain-gate contact, regarding their application in a rectifying circuit. For this purpose, we fabricated both diode structures using the organic semiconductor pentacene. dc measurements were performed showing a space-charge-limited current mobility of more than 0.1 cm2/V s for the vertical diode and a field effect mobility of 0.8 cm2/V s for the OTFT with shorted source-drain. High-frequency measurements of those diode structures in a rectifier configuration show that both types of diodes are able to follow the base-carrier frequency of 13.56 MHz which is essential for viable radio-frequency-identification (rf-ID) tags. Based on those results we evaluate the performance limits and advantages of each diode configuration regarding their application in an organic rf-ID tag. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
