| Autor: |
Si Moussa, Mehdi, Pavageau, Christophe, Simon, Pascal, Danneville, François, Russat, Jean, Fel, Nicolas, Raskin, Jean-Pierre, Vanhoenacker-Janvier, Danielle |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Microwave Theory & Techniques; Jun2006 Part 2, Vol. 54 Issue 6, p2675-2683, 9p, 7 Black and White Photographs, 19 Diagrams, 2 Charts |
| Abstrakt: |
In this paper, the design and measurement results of a CMOS partially depleted silicon-on-insulator (SOl) traveling-wave amplifier (TWA) are presented. The four-stage TWA is designed with a single common source nMOSFET in each stage using a 130-nm SOI CMOS technology requiring a chip area of 0.75 mm². A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4-V supply voltage for a power consumption of 66 mW. The designed circuit has been characterized over a temperature range from 25 °C to 300 °C. The performance degradation on the gain of the TWA, the SOI transistors, as well as the microstrip lines used for the matching network are analyzed. Thanks to the introduction of a dynamic threshold-voltage MOSFET, a greater gain-bandwidth product under lower bias conditions is demonstrated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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