| Autor: |
Zhitao Diao, Pakala, Mahendra, Panchula, Alex, Yunfei Ding, Apalkov, Dmytro, Lien-Chang Wang, Chen, Eugene, Yiming Huai |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/2006, Vol. 99 Issue 8, p08G510, 5p, 1 Black and White Photograph, 6 Graphs |
| Abstrakt: |
We present spin-transfer switching results for MgO-based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance ratio of up to 150% and low intrinsic switching current density (Jc0) of (2–3)×106 A/cm2. The low intrinsic switching current density is attributed to high tunneling spin polarization (TSP) in MgO-based MTJs. The current switching data are discussed based on a qualitative study of TSP in MgO-based MTJs. Additional film stack modification needed to decrease the switching current to meet the requirement of advanced magnetoresistive random access memory application is also discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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