| Autor: |
Cardoso, S., Ferreira, R., Silva, F., Freitas, P. P., Melo, L. V., Sousa, R. C., Redon, O., MacKenzie, M., Chapman, J. N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/2006, Vol. 99 Issue 8, p08N901, 3p, 4 Graphs |
| Abstrakt: |
Double-barrier magnetic tunnel junction (MTJ) cells incorporating one thermal barrier (GeSbTe) were fabricated for improved thermally assisted magnetic switching. The MTJ has two Al2O3 barriers with a common weakly pinned structure (storage layer) and two pinned layers (reference). The structural quality of the double junction stack and the roughness at the (buffer/thermal barrier) level were investigated and optimized. To minimize the required heating during writing, the blocking temperature (TB) of the storage layer is reduced to 110 °C by thinning the MnIr layer to 80 Å, while a strong exchange coupling and TB∼300 °C are obtained at the reference layers with a synthetic antiferromagnetically coupled CoFeB/Ru/CoFeB structure pinned to 250-Å-thick MnIr. For the write experiments, the current flowing through the MTJ (patterned down to 2 μm2) increases the temperature above the storage layer TB, under an external field of +/- 80 Oe. Current densities <1 mA/μm2 were enough to write in the MTJs with a thermal barrier (almost half the values needed without thermal barriers, which also showed a stronger dependence of the write power on the junction area). Write power values of the order of 0.3–1.8 mW/μm2 were achieved. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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