| Autor: |
Liu, Y., Chen, T. P., Ng, C. Y., Ding, L., Tse, M. S., Fung, S., Tseng, Ampere A. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Apr2006, Vol. 53 Issue 4, p914-917, 4p, 5 Graphs |
| Abstrakt: |
In this brief, the electrical characteristics of MOS structures with specially designed distributions of Si nanocrystals (nc-Si) embedded in the oxides were investigated, and very different behaviors in the electrical characteristics are observed as a result of the difference in the nc-Si distribution. For the case of nc-Si being confined in a layer in the oxide close to the gate, charging and discharging the nc-Si lead to a shift in the flat-band voltage, and a small difference in the location of the peak concentration of nc-Si can yield a large difference in the memory programming characteristics. However, for the case of nc-Si distributed throughout the oxide with a high concentration, charging and discharging the nc-Si cause a modulation in the capacitance magnitude instead of the flat-band voltage shift. The difference between the two cases highlights the importance of the nc-Si distribution in the memory device applications of the nc-Si. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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