| Autor: |
Pacčebutas, V., Aleksejenko, G., Krotkus, A., Ager III, J. W., Walukiewicz, W., Hai Lu, Schaff, William J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/8/2006, Vol. 88 Issue 19, p191109, 3p, 4 Graphs |
| Abstrakt: |
Large optical bleaching effect was found in epitaxial InN layers from Z-scan measurements at 1.054 μm laser wavelength. Optical transmittance increases nearly five times at the largest light intensities used in experiment. The bleaching recovery time shorter than 3 ps was evidenced from time-resolved measurements at this wavelength, which is much faster than the electron lifetimes of 40 and 240 ps determined on two epitaxial layers by visible pump-terahertz probe technique. Spectral investigations of the bleaching effect performed in the wavelength range from 1 to 1.55 μm support the conclusions on a narrow band gap of InN. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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