| Autor: |
Akbar, Mohammad Shahariar, Changhwan Choi, Se Jong Rhee, Krishnan, Siddarth A., Chang Yong Kang, Man Hong Zhang, Tackhwi Lee, Injo Ok, Feng Zhu, Hyoung-Sub Kim, Lee, Jack C. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; May2006, Vol. 53 Issue 5, p1200-1207, 8p, 1 Diagram, 14 Graphs |
| Abstrakt: |
Transient relaxation, which has been addressed as an undesirable issue in high-κ alternate gate dielectrics, has been studied systematically. In Hf-based dielectrics, it follows a universal line irrespective of stress times and stress voltages if stressed (static/dynamic) up to certain limits. The results presented here reveal that bulk charge trapping shows a fast transient relaxation (TR) for a very short time (~ ms) after stress (substrate injection) followed by a slow relaxation (> 1 s), while interface passivation/relaxation follows a slow trend. Bulk trappings, which play a major role in causing device instabilities in high-κ gate oxides, are mostly relaxable, while interface degradation cannot be passivated completely. Moreover, an interface-passivation mechanism seems to be independent of stress histories. Devices with stronger bulk- trapping immunity showed faster TR. The experimental results show good agreement with the simplified mathematical model presented for HfO2 gate oxides. The temperature showed a negligible effect in TR. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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